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| FJI5603D -- NPN Silicon Transistor June 2008 FJI5603D NPN Silicon Transistor Applications Equivalent Circuit * High Voltage and High Speed Power Switch Application * Electronic Ballast Application C Features * Wide Safe Operating Area * Small Variance in Storage Time * Built-in Free Wheeling Diode B 1 E I2-PAK 2.Collector 3.Emitter 1.Base Absolute Maximum Ratings* Symbol BVCBO BVCEO BVEBO IC ICP IB IBP PD TJ TSTG EAS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse)** Base Current Base Current(Pulse)** Ta = 25C unless otherwise noted Parameter Ratings 1600 800 12 3 6 2 4 100 150 - 65 ~ +150 3.5 Units V V V A A A A W C C mJ Power Dissipation(TC=25C) Junction Temperature Storage Junction Temperature Range Avalanche Energy(Tj=25C, 8mH) * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ** Pulse Test : Pulse Width = 5ms, Duty Cycle < 10% Thermal Characteristics* Symbol Rjc Rja Ta=25C unless otherwise noted Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Ratings 1.25 80 Units C/W C/W * Device mounted on minimum pad size Ordering Information Part Number FJI5603DTU Marking J5603D Package I2PAK Packing Method TUBE Remarks (c) 2008 Fairchild Semiconductor Corporation FJI5603D Rev. A3 1 www.fairchildsemi.com FJI5603D -- NPN Silicon Transistor Electrical Characteristics* Ta=25C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICES Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Test Condition IC=0.5mA, IE=0 IC=5mA, IB=0 IE=0.5mA, IC=0 VCES=1600V, IE=0 VCE=800V, VBE=0 VEB=12V, IC=0 VCE=3V, IC=0.4A VCE=10V, IC=5mA TC=25C TC=125C TC=25C TC=125C TC=25C TC=125C TC=25C TC=125C Min. 1600 800 12 Typ. 1689 870 14.8 0.01 Max. Units V V V 100 1000 A ICEO Collector Cut-off Current 0.01 100 1000 A IEBO hFE Emitter Cut-off Current DC Current Gain 0.05 20 6 20 20 29 15 43 46 0.5 1.5 1.2 0.74 0.61 0.85 0.74 745 56 5 0.76 0.83 500 35 A VCE(sat) Collector-Emitter Saturation Voltage IC=250mA, IB=25mA TC=25C IC=500mA, IB=50mA TC=25C IC=1A, IB=0.2A TC=25C 1.25 2.5 2.5 1.2 1.1 1.2 1.1 1000 500 V V V V VBE(sat) Base-Emitter Saturation Voltage IC=500mA, IB=50mA TC=25C TC=125C IC=2A, IB=0.4A TC=25C TC=125C V Cib Cob fT VF Input Capacitance Output Capacitance Current Gain Bandwidth Product Diode Forward Voltage VEB=10V, IC=0, f=1MHz VCB=10V, IE=0, f=1MHz IC=0.1A,VCE=10V IF=0.4A IF=1A pF pF MHz 1.2 1.5 V V * Pulse Test: Pulse Widt=20s, Duty Cycle10% (c) 2008 Fairchild Semiconductor Corporation FJI5603D Rev. A3 2 www.fairchildsemi.com FJI5603D -- NPN Silicon Transistor Electrical Characteristics TC=25C unless otherwise noted Symbol Parameter Test Condition Min Typ. Max. Units RESISTIVE LOAD SWITCHING (D.C < 10%, Pulse Width=20s) tON tSTG tF tON tSTG tF Turn On Time Storage Time Fall Time Turn On Time Storage Time Fall Time IC=0.5A, IB1=50mA, IB2=250mA VCC=125V, RL = 250 IC=0.3A, IB1=50mA IB2=150mA VCC=125V RL = 416 400 1.9 2.1 310 600 1.3 180 600 2.3 1000 1100 1.5 350 ns s ns ns s ns INDUCTIVE LOAD SWITCHING (VCC=15V) tSTG tF tC tSTG tF tC Storage Time Fall Time Cross-over Time Storage Time Fall Time Cross-over Time IC=0.5A, IB1=50mA, IB2=250mA, Vz=300V, LC=200H 0.8 IC=0.3A, IB1=50mAIB2=150mA, Vz=300V, LC=200H 0.8 170 180 140 170 1.2 250 250 1.2 175 200 s ns ns s ns ns (c) 2008 Fairchild Semiconductor Corporation FJI5603D Rev. A3 3 www.fairchildsemi.com FJI5603D -- NPN Silicon Transistor Typical Characteristics 3 1A IC[A], COLLECTOR CURRENT 2 hFE, DC CURRENT GAIN 900mA 800mA 700mA 600mA 500mA 400mA 300mA 200mA IB=100mA VCE=10V 100 TJ=125 C o o TJ=25 C 10 1 0 0 1 2 3 4 5 6 7 1 1 10 100 1000 VCE[V], COLLECTOR EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10 IC=5IB IC=5IB VCE(sat)(V), VOLTAGE VBE[V], VOLTAGE 1 1 TJ=25 C o TJ=125 C 0.1 o TJ=125 C o TJ=25 C o 0.01 1 10 100 1000 0.1 1 10 100 1k IC(mA), COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage 2 o Figure 4. Base-Emitter Saturation Voltage TJ=25 C 3.0A 1000 F=1MHz Cib 1.0A 1 CAPACITANCE[pF] VCE[V], VOLTAGE 2.0A 100 0.4A IC=0.2A 10 Cob 0 1 10 100 1k 1 1 10 100 IB[mA], BASE CURRENT REVERSE VOLTAGE[V] Figure 5. Typical Collector Saturation Voltage Figure 6. Capacitance (c) 2008 Fairchild Semiconductor Corporation FJI5603D Rev. A3 4 www.fairchildsemi.com FJI5603D -- NPN Silicon Transistor Typical Characteristics (Continued) 1000 900 800 700 600 500 5 4.5 IC=6IB1=2IB2 VCC=125V PW=20us 4 3.5 3 IC=6IB1=2IB2 VCC=125V PW=20us tON[ns],TIME 400 tOFF(us),TIME TJ=125 C 300 o 2.5 TJ=125 C o 2 200 TJ=25 C o 1.5 TJ=25 C o 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 3 1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 3 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 7. Resistive Switching Time, ton 1000 900 800 700 600 Figure 8. Resistive Switching Time, toff 10 9 IC=10IB1=5IB2 VCC=125V PW=20us 8 7 TJ=125 C o 6 5 IC=10IB1=5IB2 VCC=125V PW=20us tOFF(us),TIME tON[ns],TIME 4 500 TJ=125 C 3 o 400 2 300 TJ=25 C o TJ=25 C o 200 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 3 1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 3 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 9. Resistive Switching Time, ton 4 Figure 10. Resistive Switching Time, toff 6 3 IC=6IB1=2IB2 VCC=15V VZ=300V LC=200uH TJ=125 C o 5 4 IC=10IB1=2IB2 VCC=15V VZ=300V LC=200uH TJ=125 C o tSTG(us),TIME tSTG(us),TIME 3 2 2 TJ=25 C o TJ=25 C o 1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 3 1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 11. Inductive Switching Time, tSTG Figure 12. Inductive Switching Time, tSTG (c) 2008 Fairchild Semiconductor Corporation FJI5603D Rev. A3 5 www.fairchildsemi.com FJI5603D -- NPN Silicon Transistor Typical Characteristics (Continued) 400 300 800 200 IC=6IB1=2IB2 VCC=15V VZ=300V LC=200uH 700 600 500 TJ=25 C o 400 300 IC=10IB1=2IB2 VCC=15V VZ=300V LC=200uH tF(ns),TIME 100 90 80 70 60 50 40 30 tF(ns),TIME TJ=25 C 200 o TJ=125 C 100 90 80 70 60 o TJ=125 C o 20 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 3 50 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 13. Inductive Switching Time, tF 500 Figure 14. Inductive Switching Time, tF 2000 400 IC=6IB1=2IB2 VCC=15V VZ=300V LC=200uH 300 1000 900 800 700 IC=10IB1=2IB2 VCC=15V VZ=300V LC=200uH TJ=125 C o tC[ns],TIME TJ=25 C o tC[ns],TIME 600 500 400 300 200 TJ=125 C o 200 TJ=25 C o 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 3 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 15. Inductive Switching Time, tc Figure 16. Inductive Switching Time, tc 100 PC[W], POWER DISSIPATION 50 0 0 50 o 100 150 200 TC( C), CASE TEMPERATURE Figure 17. Power Derating (c) 2008 Fairchild Semiconductor Corporation FJI5603D Rev. A3 6 www.fairchildsemi.com FJI5603D FJI5603D NPN Silicon Transistor TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FPSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) PDP-SPMTM Power220(R) Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM The Power Franchise(R) TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I31 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production (c) 2008 Fairchild Semiconductor Corporation FJI5603D Rev. A3 7 www.fairchildsemi.com |
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